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2SD2655
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
REJ03G0810-0200 (Previous ADE-208-1388A) Rev.2.00 Aug.10.2005
Features
* * * * * Small size package: MPAK (SC-59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Complementary pair with 2SB1691
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking is "WM-".
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Collector to Base Voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current ic(peak) Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Note: *When using alumina ceramic board (25 x 60 x 0.7 mm) Ratings 60 50 6 1 2 800* 150 -55 to +150 Unit V V V A A mW C C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD2655
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min 60 50 6 200 Typ 0.16 0.91 280 4.2 Max 100 100 500 0.3 1.2 Unit V V V nA nA V V MHz pF Test Condition IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A IC = 0.5 A, IB = 0.05 A, Pulse test IC = 0.5 A, IB = 0.05 A, Pulse test VCE = 2 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD2655
Main Characteristics
Maximum Collector Dissipation Curve Typical Output Characteristics (1)
200 Pulse
Pc (mW)
1200
IC (mA)
When using alumina ceramic board S = 25 mm x 60 mm, t = 0.7 mm 1000
IB = 3
50 A
Collector Power Dissipation
300 A
100
800
Collector Current
250 A
200 A
150 A
400
200
100 A 50 A 0 2 4 6 8 10
0
50
100
150
200
Ambient Temperature
Ta
(C)
Collector to Emitter Voltage
VCE (V)
Typical Output Characteristics (2)
500 6mA
Typical transfer Characteristics
1000
5mA
IC (mA)
400
2mA
Collector Current IC (mA)
4mA
3mA
V CE = 2V Pulse 100
Collector Current
300
IB = 1mA
200
10
100 Pulse 0 0.4 0.8 1.2 1.6 2.0
1 0 0.2 0.4 0.6 0.8 1.0
Collector to Emitter Voltage
VCE (V)
Base to Emitter Voltage
VBE (V)
DC Current Transfer Ratio vs. Collector Current
1000
Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V)
Saturation Voltage vs. Collector Current
1 VBE(sat)
DC Current Transfer Ratio
hFE
100
0.1 VCE(sat) 0.01
10 VCE = 2V Pulse 1 1 10 100 1000
IC/IB = 10 Pulse 0.001 1 10 100 1000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD2655
Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current
Collector Output Capacitance Cob (pF)
fT (MHz)
1000 f = 1MHz IE = 0 100
500 VCE = 2V Pulse 400
Gain Bandwidth Product
300
200
10
100 0 1 10 100 1000
1 0.1
1
10
100
Collector to Base Voltage
VCB
(V)
Collector Current
IC (mA)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD2655
Package Dimensions
JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV MASS[Typ.] 0.011g
D e
A
Q
c
E
HE
L A A xM S A b
L1 A3 e
LP
Reference Symbol Dimension in Millimeters
A2
A
A1 S b b1 c b2 A-A Section
e1
c1
I1
Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q
Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
Nom
1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8
Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part Name 2SD2655WM-TL-E Quantity 3000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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